Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
- 3rd Generation SiC MOSFET technology
- Low inductance package with separate driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS compliant
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Easy to parallel and simple to drive
- Enable new hard switching PFC topologies (Totem-Pole)
- EV charging
- Server power supplies
- Solar PV inverters
- UPS
- DC/DC converters
Change Notice
Datasheets
Supplier Documentation