C3M0060065J-TR

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C3M0060065J-TR Wolfspeed
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: C3M0060065J-TR
Richardson RFPD #: C3M0060065J-TR
Description: Silicon Carbide MOSFETs
Min/Mult: 800/1
Datasheet C3M0060065J-TR Data Sheet
EDA/CAD Models

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
  • 3rd Generation SiC MOSFET technology
  • Low inductance package with separate driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Easy to parallel and simple to drive
  • Enable new hard switching PFC topologies (Totem-Pole)
Applications
  • EV charging
  • Server power supplies
  • Solar PV inverters
  • UPS
  • DC/DC converters

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 36
Rds(on) (mΩ) 60
Configuration Single SiC MOSFET
Package Type TO-263-7

Change Notice

  CREE_PCN_1280

  Wolfspeed_PCN_00136

  Wolfspeed_PCN-00145

  Wolfspeed_PCN-00154

  Wolfspeed_PCN-00171

Datasheets

  C3M0060065J

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