C3M0065100J-TR

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C3M0065100J-TR Wolfspeed
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: C3M0065100J-TR
Richardson RFPD #: C3M0065100J-TR
Description: Silicon Carbide MOSFETs
Min/Mult: 800/1
Datasheet C3M0065100J-TR Data Sheet
EDA/CAD Models

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • C3MTM SiC MOSFET technology
  • Low parasitic inductance with separate driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Low output capacitance (60pF)
  • Halogen free, RoHS compliant
Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Increase power density
  • Increase system switching frequency
Applications
  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

Key Attributes Value Search Similar
Voltage (V) 1000
Current (A) 35
Rds(on) (mΩ) 65
Configuration Single SiC MOSFET
Package Type TO-263-7

Change Notice

  CREE-PCN-1356

  Wolfspeed_PCN_00136

  Woflspeed_PDN-00001

  Wolfspeed_PDN-00001_Rev1

  Wolfspeed_PCN-00154

Datasheets

  C3M0065100J

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