C3M0120065J

Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M^TM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.

• 3rd Generation (C3M^TM) SiC MOSFET Technology
• Superior overall system level efficiency
• High frequency operation
• Robust body diode with low reverse recovery charge
• Kelvin Source connection to reduce parasitic inductance and switching losses
• Industry standard packages that meet creepage and clearance requirements

• Low on-state resistance over temperature
• Low parasitic capacitances
• Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
• Wide range of operation junction temperature

• Server Power Supplies
• EV Charging Systems
• Energy Storage Systems (UPS)
• Solar (PV) Inverters