C3M0120065J-TR

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C3M0120065J-TR Wolfspeed
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: C3M0120065J-TR
Richardson RFPD #: C3M0120065J-TR
Description: Silicon Carbide MOSFETs
Min/Mult: 800/1
Datasheet C3M0120065J-TR Data Sheet
EDA/CAD Models

Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.

Features
  • 3rd Generation (C3MTM) SiC MOSFET Technology
  • Superior overall system level efficiency
  • High frequency operation
  • Robust body diode with low reverse recovery charge
  • Kelvin Source connection to reduce parasitic inductance and switching losses
  • Industry standard packages that meet creepage and clearance requirements
Figures of Merit
  • Low on-state resistance over temperature
  • Low parasitic capacitances
  • Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
  • Wide range of operation junction temperature
Target Applications
  • Server Power Supplies
  • EV Charging Systems
  • Energy Storage Systems (UPS)
  • Solar (PV) Inverters

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 21
Rds(on) (mΩ) 120
Configuration Single SiC MOSFET
Package Type TO-263-7

Change Notice

  CREE_PCN_1280

  Wolfspeed_PCN_00136

  Woflspeed_PDN-00001

  Wolfspeed_PDN-00001_Rev1

  Wolfspeed_PCN-00154

Datasheets

  C3M0120065J

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