C3M0900170J-TR


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: C3M0900170J-TR
Richardson RFPD #: C3M0900170J-TR
Description: Silicon Carbide MOSFETs
Min/Mult: 800/1
Datasheet C3M0900170J-TR Data Sheet
EDA/CAD Models

Silicon Carbide Power MOSFET
N-Channel Enhancement Mode

  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • 12V...18V / 0V VGS compatible with most flyback controllers
  • Ultra-low drain-gate capacitance
  • Qualified to operate under high humidity and high temperature environmental conditions
  • Halogen free, RoHS compliant

Benefits

  • Smooth switching waveforms
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Increase system switching frequency
  • Increase system reliability

Applications

  • Auxillary power supplies
  • Switch Mode Power Supplies
  • High-Voltage capacitive loads

Key Attributes Value Search Similar
Voltage (V) 1700
Current (A) 4.4
Rds(on) (mΩ) 900
Configuration Single SiC MOSFET
Package Type TO-263-7

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1:  $2.5700


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