C6D10170H

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

• Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
• Zero Reverse Recovery Current / Forward Recovery Voltage
• Temperature-Independent Switching Behavior
• Low Profile Package with Low Inductance

Benefits

• Higher Efficiency
• Essentially No Switching Losses
• Reduction of Cooling Requirements
• Parallel Devices Without Thermal Runaway

Applications

• Industrial Switched Mode Power Supplies
• Uninterruptible and AUX Power Supplies
• Boost for PFC and DC-DC Stages
• Solar Inverters