CAB760M12HM3

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CAB760M12HM3 Wolfspeed
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: CAB760M12HM3
Richardson RFPD #: CAB760M12HM3
Description: Silicon Carbide MOSFET Modules
Min/Mult: 1
Datasheet CAB760M12HM3 Data Sheet
EDA/CAD Models

1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module

Technical Features
  • Low Inductance, Low Profile 62mm Footprint
  • High Junction Temperature (175 C) Operation
  • Implements Switching Optimized Third Generation SiC MOSFET Technology
  • Light Weight AlSiC Baseplate
  • High Reliability Silicon Nitride Insulator
Applications
  • Railway and Traction
  • Solar
  • EV Chargers
  • Industrial Automation and Testing
System Benefits
  • Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • High Reliability Material Selection

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 760
Configuration Half-bridge
Package Type 110 x 65 mm

Change Notice

  CREE-PCN-1349

  CREE-PCN-1345

  CREE-PCN-1339

  Wolfspeed_PCN-00129

  Wolfspeed_PCN_00136

  Wolfspeed_PCN-00129_Rev1

  Wolfspeed_PCN-00154

  Wolfspeed_PCN-00161

  Wolfspeed_PCN-00162

Datasheets

  CAB760M12HM3

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