CAS480M12HM3

1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module

• Low Inductance, Low Profile 62mm Footprint
• High Junction Temperature (175 C) Operation
• Implements Switching Optimized Third Generation SiC MOSFET Technology
• Zero Reverse Recovery from Diodes
• Light Weight AlSiC Baseplate
• High Reliability Silicon Nitride Insulator

• Railway and Traction
• Solar
• EV Chargers
• Industrial Automation and Testing

• Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
• Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
• High Reliability Material Selection