CG2H40045F

Stock Availability: 174

CG2H40045F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CG2H40045F
Richardson RFPD #: CG2H40045F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CG2H40045F Data Sheet
EDA/CAD Models

CG2H40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 4000
Pout (W) 45
Gain (dB) 17
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 62
P1dB (W)
Psat (W) 55
Thermal Resistance (°C/W) 2.8
Package Name
Package Type Ceramic Flanged

Datasheets

  cg2h40045

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Stock: 174 Units

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