CG2H40120F

Stock Availability: 50

CG2H40120F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CG2H40120F
Richardson RFPD #: CG2H40120F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CG2H40120F Data Sheet
EDA/CAD Models

CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40120 ideal for linear and compressed amplifier circuits.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 2500
Pout (W) 120
Gain (dB) 20
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 1.39
Package Name
Package Type Flanged

Datasheets

  cg2h40120

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Stock: 50 Units

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