CG2H80045D-GP4
Stock Availability: 0
| Manufacturer: | MACOM Technology Solutions |
|---|---|
| Mfg #: | CG2H80045D-GP4 |
| Richardson RFPD #: | CG2H80045D-GP4 |
| Description: | RF Power Transistor |
| Min/Mult: | 10/1 |
| Datasheet |
CG2H80045D-GP4 
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| EDA/CAD Models |
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CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
Datasheets
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