CGH27060F

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CGH27060F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH27060F
Richardson RFPD #: CGH27060F
Description: RF Power Transistor
Min/Mult: 50/50
Datasheet CGH27060F Data Sheet
EDA/CAD Models

CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 30
Maximum Frequency (MHz) 3000
Pout (W) 8
Gain (dB) 13
Supply Voltage (V) 28
50 Ohm Matching
Test signal WIMAX
Pulse Width
Duty Cycle
Efficiency (%) 24
P1dB (W)
Psat (W) 60
Thermal Resistance (°C/W) 2.8
Package Name
Package Type Ceramic Flanged

Datasheets

  cgh27060f

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