CGH40010P


Stock Availability: 15

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40010P
Richardson RFPD #: CGH40010P
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH40010P Data Sheet
EDA/CAD Models

CGH40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package.

A high power RF Amplifier module with this device is available:

1208/BBM3K5OKO

1164/BBM3Q6AHM

1131/BBM5K8CGM


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Pout (W) 10
Gain (dB) 14.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 65
P1dB (W)
Psat (W) 12.5
Thermal Resistance (°C/W) 8
Package Name
Package Type Ceramic Flangeless

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Datasheets

  cgh40010

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