CGH40045F


Stock Availability: 564

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40045F
Richardson RFPD #: CGH40045F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH40045F Data Sheet
EDA/CAD Models

CGH40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.

A high power RF Amplifier module with this device is available:

1203/BBM3K5ANQ

1208/BBM3K5OKO

1117/BBM3K5KEL

1119/BBM3K5KHM

1164/BBM3Q6AHM



Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 4000
Pout (W) 45
Gain (dB) 14
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 55
P1dB (W)
Psat (W) 55
Thermal Resistance (°C/W) 2.8
Package Name
Package Type Ceramic Flanged

Datasheets

  cgh40045

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