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Product image for reference only. For precise specifications, refer to datasheet.
CGH40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.
A high power RF Amplifier module with this device is available:
1203/BBM3K5ANQ
1208/BBM3K5OKO
1117/BBM3K5KEL
1119/BBM3K5KHM
1164/BBM3Q6AHM
cgh40045
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