CGHV40030P

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CGHV40030P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV40030P
Richardson RFPD #: CGHV40030P
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV40030P Data Sheet
EDA/CAD Models

CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030P operates on a 50 volt rail circuit while housed in a pill package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Pout (W) 30
Gain (dB) 16.6
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 64
P1dB (W)
Psat (W) 30
Thermal Resistance (°C/W) 5.9
Package Name 440196
Package Type Ceramic Flangeless

Change Notice

  MACOM_PCN-01753

Datasheets

  cghv40030

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