CHA1010-99F/00

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CHA1010-99F/00 United Monolithic Semiconductors
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Manufacturer: United Monolithic Semiconductors
Mfg #: CHA1010-99F/00
Richardson RFPD #: CHA1010-99F/00
Description: RF & MW LNA
Min/Mult: 1
Datasheet CHA1010-99F/00 Data Sheet
EDA/CAD Models

7-11 GHz Low Noise Amplifier GaAs Monolithic Microwave IC. The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 7000
Maximum Frequency (MHz) 11000
Gain (dB) 32
Gain Flatness (dB) 1.1
Noise Figure (dB) 1
P1dB (dBm) 5.5
Output IP3 (dBm)
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 5
Current (mA) 30
Package Type Die

Datasheets

  CHA1010-99F

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Unit Price: Pricing in (USD)
1:  $38.3000
500:  $33.7100
1000:  $29.6700
2500:  Get Quote


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