CHA1010-99F/00


Stock Availability: 0

Manufacturer:
Mfg #: CHA1010-99F/00
Richardson RFPD #: CHA1010-99F/00
Description: RF & MW LNA
Min/Mult: 100/100
Datasheet CHA1010-99F/00 Data Sheet
EDA/CAD Models

7-11 GHz Low Noise Amplifier GaAs Monolithic Microwave IC. The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 7000
Maximum Frequency (MHz) 11000
Gain (dB) 32
Gain Flatness (dB) 1.1
Noise Figure (dB) 1
P1dB (dBm) 5.5
Output IP3 (dBm)
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 5
Current (mA) 30
Package Type Die

Datasheets

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Unit Price: Pricing in (USD)
100:  $38.3000
200:  $33.7100
300:  $29.6700

Must order in multiple of 100

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