CHA2110-QDG/20

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CHA2110-QDG/20 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA2110-QDG/20
Richardson RFPD #: CHA2110-QDG/20
Description: RF & MW LNA
Min/Mult: 1
Datasheet CHA2110-QDG/20 Data Sheet
EDA/CAD Models

The CHA2110-QDG is a monolithic two-stage wide band, self-biased low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, and air bridges. It is supplied in RoHS compliant SMD package.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 7000
Maximum Frequency (MHz) 12000
Gain (dB) 19
Gain Flatness (dB)
Noise Figure (dB) 1.2
P1dB (dBm) 10
Output IP3 (dBm) 21
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 4
Current (mA) 45
Package Type QFN

Change Notice

  UMS_PCN_2024_008

  UMS_PCN_2023_002

Datasheets

  CHA2110-QDG

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