CHA5266-99F/00


Stock Availability: 0

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA5266-99F/00
Richardson RFPD #: CHA5266-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 100/1
Datasheet CHA5266-99F/00 Data Sheet
EDA/CAD Models

10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC. The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 10000
Maximum Frequency (MHz) 16000
Gain (dB) 23
Gain Flatness (dB)
Efficiency (%)
Supply Voltage (V) 5
P1dB (dBm) 26.5
Psat (W)
PAvg (W)
Package Type Chip

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100:  $22.4200
500:  Get Quote


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