CHA6262-99F
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA6262-99F |
| Richardson RFPD #: | CHA6262-99F |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
CHA6262-99F |
| EDA/CAD Models |
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The CHA6262-99F is a three-stage GaN High Power Amplifier operating in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 36% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 30dB. The overall power supply is 18V/182mA. This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems. This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems. The product is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
Datasheets
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