CHA6282-QCB/20


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA6282-QCB/20
Richardson RFPD #: CHA6282-QCB/20
Description: RF & MW Power Amplifier
Min/Mult: 73/1
Datasheet CHA6282-QCB/20 Data Sheet
EDA/CAD Models

The CHA6282-QCB is a three-stage GaN High Power Amplifier in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 28% of Power Added Efficiency. The circuit exhibits a small signal gain higher than 30dB. The overall power supply is 18V/260mA. The circuit is dedicated to Space applications and well suited for a wide range of microwave applications and systems. The product is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is provided on low cost SMD RoHS compliant plastic package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 17300
Maximum Frequency (MHz) 21300
Gain (dB) 30
Gain Flatness (dB)
Efficiency (%) 28
Supply Voltage (V) 18
P1dB (dBm)
Psat (W) 4
PAvg (W)
Package Type Plastic SMT

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