CHA6362-QXG/20


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA6362-QXG/20
Richardson RFPD #: CHA6362-QXG/20
Description: RF & MW Power Amplifier
Min/Mult: 60/1
Datasheet CHA6362-QXG/20 Data Sheet
EDA/CAD Models

The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power. It integrates a power detector and allows gain control. ESD protections are included. It is designed for Point to Point Radio or K-band Sat-Com application.

The circuit is manufactured with a pHEMT process, 0.15um gate length. It is supplied in RoHS compliant SMD package.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 17700
Maximum Frequency (MHz) 19700
Gain (dB) 22
Gain Flatness (dB)
Efficiency (%) 24
Supply Voltage (V) 6
P1dB (dBm) 33
Psat (W) 2.82
PAvg (W)
Package Type QFN

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Unit Price:
60:  $69.7400
100:  $50.6000
500:  $43.4400
1000:  $38.2200
2500:  Get Quote


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