CHA6558-QGG-BOA


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Manufacturer: United Monolithic Semiconductors
Mfg #: CHA6558-QGG-BOA
Richardson RFPD #: CHA6558-QGG-BOA
Description: RF & MW Amplifier Evaluation Board/Designer Kit
Min/Mult: 1
Datasheet CHA6558-QGG-BOA Data Sheet
EDA/CAD Models

UMS has developed a Ka-Band packaged monolithic high power amplifier delivering 33dBm output power at -1dB compression point, associated with 23dB of linear gain from 29.5 to 30.0 GHz for an overall power supply of 6V/1.9A in saturation. The circuit is dedicated to telecommunication and VSAT, and also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, and will be available in a standard surface mount 28 leads QFN5x5, compliant with the Restriction of Hazardous Substances (RoHS) European Union directive 2002/95/EC.

Key Attributes Value Search Similar
P3dB (dBm)
P1dB (dBm) 32.5
Minimum Frequency (MHz) 29000
Maximum Frequency (MHz) 31500
Gain (dB) 22
Supply Voltage (V) 6
Id (Device Current) (mA) 1400

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