CHA7250-QAB/20


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA7250-QAB/20
Richardson RFPD #: CHA7250-QAB/20
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CHA7250-QAB/20 Data Sheet
EDA/CAD Models

The CHA7250-QAB is a two stage monolithic GaN on SiC Power Amplifier exhibiting 10W saturated output power over 10-12.75GHz frequency range. It features 37% Power Added Efficiency and a linear gain of 20dB. It is designed for Point To Point Radio and is provided on low cost SMD RoHS compliant plastic package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 10000
Maximum Frequency (MHz) 12750
Gain (dB) 20
Gain Flatness (dB)
Efficiency (%) 37
Supply Voltage (V) 20
P1dB (dBm)
Psat (W) 10
PAvg (W)
Package Type Plastic SMT

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Unit Price:
1:  $125.5600
100:  $117.5600
250:  $103.3700
500:  Get Quote


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