CHA7453-99F/00


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA7453-99F/00
Richardson RFPD #: CHA7453-99F/00
Description: mmW Power Amplifier
Min/Mult: 25/1
Datasheet CHA7453-99F/00 Data Sheet
EDA/CAD Models

The CHA7453-99F is a four-stage High Power Amplifier operating between 37.5 and 41.5 GHz and providing more than 8W of saturated output power and 22% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7453-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 37500
Maximum Frequency (MHz) 41500
Gain (dB) 28
Gain Flatness (dB)
Noise Figure (dB)
P1dB (dBm)
Psat (dBm) 39.5
Output IP3 (dBm)
Efficiency (%) 22
Package Type Die

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Pricing in (USD)

Unit Price:
25:  $365.7500
50:  $274.3100
100:  $266.4600
500:  $256.5000
1000:  $242.4900
2500:  Get Quote


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