CHK8101-SYC/26

The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as space and telecommunication. The CHK8101-SYC is developed on a 0.5µm gate length GaN on SiC HEMT process. It requires an external matching circuitry. The CHK8101-SYC is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.