CHK8101A99F
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHK8101A99F |
| Richardson RFPD #: | CHK8101A99F |
| Description: | RF Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
CHK8101A99F 
|
| EDA/CAD Models |
|
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. It is proposed in a bare die form and requires an external matching circuitry.
Datasheets
Please notify me when stock becomes available!