CHK9013-99F

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CHK9013-99F United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHK9013-99F
Richardson RFPD #: CHK9013-99F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CHK9013-99F Data Sheet
EDA/CAD Models

The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die form and requires an external matching circuitry.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 8000
Pout (W) 85
Gain (dB) 18
Supply Voltage (V) 30
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 65
P1dB (W)
Psat (W) 88
Thermal Resistance (°C/W) 2.1
Package Name
Package Type Die

Datasheets

  CHK9013-99F

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Unit Price: Pricing in (USD)
1:  $126.2900
100:  $118.9200
500:  Get Quote


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