CHK9014-99F

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CHK9014-99F United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHK9014-99F
Richardson RFPD #: CHK9014-99F
Description: RF Power Transistor
Datasheet CHK9014-99F Data Sheet
EDA/CAD Models

The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25um gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die form and requires an external matching circuitry.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 13000
Pout (W) 55
Gain (dB) 13
Supply Voltage (V) 30
50 Ohm Matching
Test signal Pulsed
Pulse Width
Duty Cycle
Efficiency (%) 50
P1dB (W)
Psat (W) 60
Thermal Resistance (°C/W) 2.6
Package Name
Package Type Die

Datasheets

  CHK9014-99F

Stock

 Request Quote for Lead Time
Min/Mult: 50
Unit Price: Pricing in (USD)
50:  $111.0300
100:  $100.0700
250:  $92.4700
500:  $87.7600

Must order in multiple of 50

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