CHKA011ASXA/26
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
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| Mfg #: | CHKA011ASXA/26 |
| Richardson RFPD #: | CHKA011ASXA/26 |
| Description: | RF Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
CHKA011ASXA/26 
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| EDA/CAD Models |
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The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
The CHKA011aSXA is developed on a 0.5 um gate length GaN HEMT process. It requires an external matching circuitry.
It is proposed in ceramic metal flange power package, compliant with the RoHS N 2011/65 and REACH N1907/2006 directives.
Datasheets
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