CHZ180AASEB
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
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| Mfg #: | CHZ180AASEB |
| Richardson RFPD #: | CHZ180AASEB |
| Description: | RF Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
CHZ180AASEB 
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| EDA/CAD Models |
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The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180AaSEB is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi-MMIC technology. It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.
Datasheets
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