CHZ9012-QFA


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHZ9012-QFA
Richardson RFPD #: CHZ9012-QFA
Description: RF Power Transistor
Min/Mult: 45/1
Datasheet CHZ9012-QFA Data Sheet
EDA/CAD Models

The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies. The CHZ9012-QFA is fully matched on 50 Ohms. It can be used following several operating conditions to meet system requirements. This product is dedicated to a wide range of applications, from military to commercial radar systems. The CHZ9012-QFA is proposed in low cost plastic package providing low parasitic and low thermal resistance. This product is supplied in RoHS compliant SMD package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 3400
Pout (W) 60
Gain (dB) 16
Supply Voltage (V) 30
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 400
Duty Cycle 15
Efficiency (%) 52
P1dB (W)
Psat (W) 65
Thermal Resistance (°C/W) 0.86
Package Name DFN
Package Type Plastic SMT

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Unit Price:
45:  $299.0800
50:  $266.4100
100:  Get Quote


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