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Product image for reference only. For precise specifications, refer to datasheet.
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 500 MHz to 2700 MHz. The transistor is available in a 6 leaded flange package.
cmpa0527005f
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