CMPA0527005F


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA0527005F
Richardson RFPD #: CMPA0527005F
Description: RF & MW Power Amplifier
Min/Mult: 50/1
Datasheet CMPA0527005F Data Sheet
EDA/CAD Models

CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 500 MHz to 2700 MHz. The transistor is available in a 6 leaded flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 500
Maximum Frequency (MHz) 2700
Gain (dB) 21
Gain Flatness (dB)
Efficiency (%) 49.2
Supply Voltage (V) 50
P1dB (dBm)
Psat (W)
PAvg (W)
Package Type Flanged

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50:  $79.5400
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