CMPA2738060F


Stock Availability: 0

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA2738060F
Richardson RFPD #: CMPA2738060F
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CMPA2738060F Data Sheet
EDA/CAD Models

CMPA2738060F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 3800
Gain (dB) 33.8
Gain Flatness (dB)
Efficiency (%) 54
Supply Voltage (V) 50
P1dB (dBm)
Psat (W) 85
PAvg (W)
Package Type Screw-down

Datasheets

Stock

Request Quote for Lead Time

Order

Pricing in (USD)

Unit Price:
1:  $712.8400
10:  Get Quote


Please notify me when stock becomes available!