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Product image for reference only. For precise specifications, refer to datasheet.
CMPA5259050S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This MMIC contains a two-stage reactively matched amplifier design approach enabling high power and power added efficiency to be achieved in a 5 mm x 5 mm surface mount (QFN package).
MACOM_PCN-01755
MACOM_PCN-01810
MACOM_PCN-01871
MACOM_PCN-01871_3Jun
cmpa5259050s
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