DC35GN-15-D3


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Manufacturer: Microchip
Mfg #: DC35GN-15-D3
Richardson RFPD #: DC35GN-15-D3
Description: RF Power Transistor
Min/Mult: 1
Datasheet DC35GN-15-D3 Data Sheet
EDA/CAD Models

The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz band. This transistor can be used for narrow or broadband pulsed or CW applications. Housed in a 3x6mm Plastic DFN SMT package and offering small size and weight.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 50
Maximum Frequency (MHz) 3500
Pout (W) 15
Gain (dB) 18
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 65
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 4.2
Package Name DFN
Package Type Plastic SMT

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