E3M0021120K

Features

• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
• Automotive Qualified (AEC-Q101) and PPAP Capable

Benefits

• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency

Applications

• Motor Control
• EV battery chargers
• High voltage DC/DC converters