E3M0120090J-TR


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: E3M0120090J-TR
Richardson RFPD #: E3M0120090J-TR
Description: Silicon Carbide MOSFETs
Min/Mult: 800/1
Datasheet E3M0120090J-TR Data Sheet
EDA/CAD Models

Silicon Carbide Power MOSFET
E-Series Automotive
Features
  • 3rd generation SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Wide creepage (~7mm) between drain and source
  • Automotive qualified (AEC-Q101) and PPAP capable
Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Increase power density
  • Increase system switching frequency
Applications
  • EV charging
  • DC/DC converters
  • SMPS
  • UPS
  • Solar PV inverters

Key Attributes Value Search Similar
Voltage (V) 900
Current (A) 22
Rds(on) (mΩ) 120
Configuration Single SiC MOSFET
Package Type TO-263-7

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