E4M0015075J2-TR

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E4M0015075J2-TR Wolfspeed
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Wolfspeed
Mfg #: E4M0015075J2-TR
Richardson RFPD #: E4M0015075J2-TR
Description: Silicon Carbide MOSFETs
Min/Mult: 800/800
Datasheet E4M0015075J2-TR Data Sheet
EDA/CAD Models

Silicon Carbide Power MOSFET
E-Series Automotive
N-Channel Enhancement Mode

  • 750V SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 4.7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Automotive qualified (AEC-Q101) and PPAP capable

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Motor Control
  • EV On Board Battery Chargers (OBC)
  • Automotive DC/DC Converters for EV/HEV

Key Attributes Value Search Similar
Voltage (V) 750
Current (A) 156
Rds(on) (mΩ) 15
Configuration Single SiC MOSFET
Package Type TO-263-7L XL

Change Notice

  Wolfspeed_PCN_00136

  Wolfspeed_PCN-00145

  Wolfspeed_PCN-00154

Datasheets

  E4M0015075J2

Stock

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
800:  $12.4300

Must order in multiple of 800

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