EK29101-01

The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging.

Features

• High- and Low-side FET drivers
• Dead-time control
• Fast propagation delay, 11ns
• Internal gate overvoltage management
• Sub-nanosecond rise and fall time
• 2A/4A peak source/sink current
• Package – Flip chip

Applications

• DC–DC conversions
• AC–DC conversions
• Wireless power
• LiDAR