GS-EVM-HB-650V150A-SP1
Stock Availability: 0
| Manufacturer: | |
|---|---|
| Mfg #: | GS-EVM-HB-650V150A-SP1 |
| Richardson RFPD #: | GS-EVM-HB-650V150A-SP1 |
| Description: | GaN Power Transistor Test/Evaluation Product |
| Min/Mult: | 1 |
| Datasheet |
GS-EVM-HB-650V150A-SP1 |
| EDA/CAD Models |
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650V 150A Half-Bridge Intelligent Power Module with Integrated Gate Drive
This 650V 150A GaN E-mode IPM provides ultra-low ESW (switching losses), integrated gate drive, ultra-small system form factor, and low RDS(on). The module is designed for high-efficiency high switching frequency applications such as PV Inverters, energy storage systems, UPS, VFD and other general-purpose use.
Features and Benefits- Includes 2 GS-065-150-1-D (650V 150A E-mode Die)
- Isolated, integrated gate drive
- Ultra low 0.2 C/W RJUNC_PLATE
- Low RDS(on) and low switching losses (ESW)
- Industry-standard case with Press-Fit Pins
- PV Inverters
- Energy storage systems
- UPS
- VFD
- EV Chargers
Please notify me when stock becomes available!