GS61004B-EVBCD
Stock Availability: 0
| Manufacturer: | |
|---|---|
| Mfg #: | GS61004B-EVBCD |
| Richardson RFPD #: | GS61004B-EVBCD |
| Description: | GaN Power Transistor Test/Evaluation Product |
| Min/Mult: | 1 |
| Datasheet |
GS61004B-EVBCD 
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| EDA/CAD Models |
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100 V GaN E-HEMT FB EVB optimized for Class D Amplifiers
The GS61004B-EVBCD evaluation board allows the user to evaluate GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration. The design is optimized for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.
Features- Four GS61004B GaN transistors and two PE29102 E-HEMT drivers
- GaN transistors operable up to 100 MHz
- Transistor driver operable up to 40MHz
- Best-in-class propagation delay
- Optimized, Vcc independent, for matched dead time
- Integrated dead-time control, resistor-adjustable
Datasheets
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