GS61008P-EVBHF


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer:
Mfg #: GS61008P-EVBHF
Richardson RFPD #: GS61008P-EVBHF
Description: GaN Power Transistor Test/Evaluation Product
Min/Mult: 1
Datasheet GS61008P-EVBHF Data Sheet
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The GS61008P-EVBHF evaluation board (EVB) allows the user to evaluate GaN Systems’ GS61008P Enhancement Mode High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29101 gate driver in a half-bridge configuration. The PE29101 integrated high-speed driver is designed to control the gates of GaN Systems’ E-HEMTs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub nano-second range.


Key Attributes Value Search Similar
Description GS61008P Half-Bridge kit with high speed driver

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