GS66508P-MR

The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology cell layout for high-current die performance & yield. GaNPX packaging enables low inductance and low thermal resistance in a small package. The GS66508P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.