GTRA362002FC-V1-R0

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GTRA362002FC-V1-R0 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTRA362002FC-V1-R0
Richardson RFPD #: GTRA362002FC-V1-R0
Description: RF Power Transistor
Min/Mult: 1
Datasheet GTRA362002FC-V1-R0 Data Sheet
EDA/CAD Models

The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3400
Maximum Frequency (MHz) 3600
Pout (W) 29
Gain (dB) 13.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 42
P1dB (W)
Psat (W) 200
Thermal Resistance (°C/W) 2.8
Package Name H-37248C-4
Package Type Ceramic Flangeless

Datasheets

  gtra362002fc

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