GTVA212701FA-V2-R0

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GTVA212701FA-V2-R0 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTVA212701FA-V2-R0
Richardson RFPD #: GTVA212701FA-V2-R0
Description: RF Power Transistor
Min/Mult: 1
Datasheet GTVA212701FA-V2-R0 Data Sheet
EDA/CAD Models

The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced earless package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2110
Maximum Frequency (MHz) 2200
Pout (W) 56.2
Gain (dB) 19
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 38
P1dB (W)
Psat (W) 300
Thermal Resistance (°C/W) 1.1
Package Name H-87265J-2
Package Type Ceramic Flangeless

Datasheets

  gtva212701fa

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