HMC1099PM5ETR


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC1099PM5ETR
Richardson RFPD #: HMC1099PM5ETR
Description: RF & MW Power Amplifier
Min/Mult: 500/1
Datasheet HMC1099PM5ETR Data Sheet
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The HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier that delivers 10 W (40 dBm) with up to 60% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 1.1 GHz, at an input power (PIN) of 27 dBm. The gain flatness is between 0.5 dB to 2 dB typical at small signal levels.

The HMC1099PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

The HMC1099PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 10
Maximum Frequency (MHz) 1100
Gain (dB) 18
Gain Flatness (dB) 0.5
Efficiency (%) 45
Supply Voltage (V) 28
P1dB (dBm)
Psat (W)
PAvg (W)
Package Type LFCSP

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Pricing in (USD)

Unit Price:
500:  $109.9500
1000:  $108.5400


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