HMC1114PM5ETR

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HMC1114PM5ETR Analog Devices, Inc. (ADI)
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Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC1114PM5ETR
Richardson RFPD #: HMC1114PM5ETR
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet HMC1114PM5ETR Data Sheet
EDA/CAD Models

The HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The gain flatness is <1 dB typical at small signal levels. The HMC1114PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 3800
Gain (dB) 34.5
Gain Flatness (dB) 0.8
Efficiency (%) 47.5
Supply Voltage (V) 28
P1dB (dBm)
Psat (W)
PAvg (W)
Package Type LFCSP

Datasheets

  HMC1114PM5E

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