HMC907APM5E


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC907APM5E
Richardson RFPD #: HMC907APM5E
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet HMC907APM5E Data Sheet
EDA/CAD Models

The HMC907APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, +40 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907APM5E ideal for EW, ECM, Radar and test equipment applications. The HMC907APM5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 200
Maximum Frequency (MHz) 22000
Gain (dB) 13
Gain Flatness (dB) 0.6
Efficiency (%)
Supply Voltage (V) 10
P1dB (dBm) 28
Psat (W) 0.708
PAvg (W)
Package Type QFN

Datasheets

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Mfg. Stock: 634 Units

Unit Price: Pricing in (USD)
1:  $193.3900

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Unit Price: Pricing in (USD)
1:  $198.1900