HMC943APM5E


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC943APM5E
Richardson RFPD #: HMC943APM5E
Description: RF & MW Power Amplifier
Min/Mult: 8/1
Datasheet HMC943APM5E Data Sheet
EDA/CAD Models

The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz. The HMC943APM5E provides 23 dB of gain, 34 dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5 V supply. The high output third-order intercept (IP3) of 39 dBm makes the HMC943APM5E ideal for microwave radio applications. A power detector output is also available. The HMC943APM5E amplifier input/outputs (I/Os) are internally matched to 50 Ohm. The device is packaged in a leadless, 5 mm × 5 mm, surface-mount LFCSP_CAV package, and requires no external matching components.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 24000
Maximum Frequency (MHz) 34000
Gain (dB) 23
Gain Flatness (dB)
Efficiency (%) 23
Supply Voltage (V) 5.5
P1dB (dBm) 33
Psat (W) 2.512
PAvg (W)
Package Type LFCSP_CAV

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Unit Price:
8:  $86.2500
10:  $83.7800
25:  $80.3500
100:  $78.2000
500:  $76.1700
1000:  $75.1900


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